symbol 10 sec steady state v ds v gs -0.5 -0.5 -0.45 -0.40 i dm 0.38 0.28 0.24 0.18 t j , t stg symbol typ max t 10s 275 330 steady-state 360 450 steady-state r jl 300 350 maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a r ja c/w maximum junction-to-ambient a c/w parameter continuous drain current af units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v a c t a =70c i d pulsed drain current b t a =25c junction and storage temperature range power dissipation a w drain-source voltage -20 8 -55 to 150 -1 gate-source voltage p d v ds (v) = -20v i d = -0.5 a (v gs = -4.5v) r ds(on) < 0.8 (v gs = -4.5v) r ds(on) < 1 (v gs = -2.5v) r ds(on) < 1.3 (v gs = -1.8v) esd protected! the AO5401E/l uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications.AO5401E and AO5401El are electrically identical. -rohs compliant -AO5401El is halogen free g d s AO5401E p-channel enhancement mode field effect transistor general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -20 v 1 t j =55c 5 1 a 10 a v gs(th) -0.4 -0.5 -0.9 v i d(on) -1 a 0.53 0.8 t j =125c 0.75 0.95 0.72 1 0.95 1.3 g fs 0.9 s v sd -0.66 -1 v i s -0.5 a c iss 72 100 pf c oss 17 pf c rss 9 pf t d(on) 60.5 ns t r 150 ns t d(off) 612 ns t f 436 ns t rr 27 35 ns q rr 8.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. diode forward voltage maximum body-diode continuous current input capacitance output capacitance gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =50 , r gen =3 turn-off fall time v gs =0v, v ds =-10v, f=1mhz switching parameters v gs =-2.5v, i d =-0.5a i s =-0.1a,v gs =0v v ds =-5v, i d =-0.5a v gs =-1.8v, i d =-0.3a i dss ? gate threshold voltage v ds =v gs i d =-250 a v ds =-20v, v gs =0v v ds =10v, v gs =8v zero gate voltage drain current v ds =10v, v gs =4.5v i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-0.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-0.5a reverse transfer capacitance i f =-0.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : oct 2008 AO5401E p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) -3.5v v gs =-2.0v -3v -6v -10v -4.5v 0 1 2 3 0 1 2 3 4 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 0.8 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.4 0.8 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-0.5a 25c 125c -4v v gs =-2.5v -2.5v v gs =-1.8v v gs =-2.5v v gs =-4.5v AO5401E p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 20 40 60 80 100 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =-10v i d =-0.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =450c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d t on p d AO5401E p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AO5401E p-channel enhancement mode field effect transistor www.freescale.net.cn 5 / 5
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